v rrm = 50 v - 300 v i f = 35 a features ? high surge capability do-5 package ? types from 50 to 300 v v rrm ? not esd sensitive note: 1. standard polarity: stud is cathode. 3. stud is base. parameter symbol 1N1183 (r) 1n1184 (r) unit repetitive peak reverse voltage v rrm 50 100 v rms reverse voltage v rms 35 70 v dc blocking voltage v dc 50 100 v silicon standard recover y diode conditions 300 210 300 200 1N1183 thru 1n1187r 1n1187 (r) 200 140 1n1186 (r) maximum ratings, at t j = 25 c, unless otherwise specified 2. reverse polarity (r): stud is anode. dc blocking voltage v dc 50 100 v continuous forward current i f 35 35 a operating temperature t j -55 to 150 -55 to 150 c storage temperature t stg -55 to 150 -55 to 150 c parameter symbol 1N1183 (r) 1n1184 (r) unit diode forward voltage 1.2 1.2 10 10 a 10 10 ma thermal characteristics thermal resistance, junction - case r thjc 0.25 0.25 c/w v electrical characteristics, at tj = 25 c, unless otherwise specified -55 to 150 -55 to 150 t c = 25 c, t p = 8.3 ms 300 200 surge non-repetitive forward current, half sine wave i f,sm 1n1186 (r) 0.25 v r = 50 v, t j = 140 c 0.25 1.2 1.2 10 v r = 50 v, t j = 25 c i f = 35 a, t j = 25 c t c 140 c conditions 595 595 -55 to 150 35 35 10 a 595 reverse current i r v f 595 -55 to 150 1n1187 (r) 10 10 www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 1
1N1183 thru 1n1187r www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. 1N1183 thru 1n1187r do- 5 (do-203ab) j k g f a e d p n b c m inches millimeters min max min max a 1/4 ?28 unf b 0.669 0.687 17.19 17.44 c ----- 0.794 ----- 20.16 d ----- 1.020 ----- 25.91 e 0.422 0.453 10.72 11.50 f 0.115 0.200 2.93 5.08 g ----- 0.460 ----- 11.68 j ----- 0.280 ----- 7.00 k 0.236 ----- 6.00 ----- m ----- 0.589 ----- 14.96 n ----- 0.063 ----- 1.60 p 0.140 0.175 3.56 4.45 www.genesicsemi.com/s ilicon-products/standard-recovery-rectifiers/ 3
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